Co-deposition of MoS2 films by reactive sputtering and formation of tree-like structures
Co-deposition of MoS2 films by reactive sputtering and formation of tree-like structures
复制标题
反应溅射共沉积MoS2薄膜并形成树状结构
DOI：
10.1088/1361-6528/ac70e3
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发表时间：
2022
期刊：
影响因子：
3.5
通讯作者：
Okada Yoshitaka
中科院分区：
文献类型：
--
作者：
Kim Myeongok;Giteau Maxime;Ahsan Nazmul;Miyashita Naoya;Thirumalaisamy Logu;Chen Chen;Redwing Joan M;Okada Yoshitaka
过渡金属二硫属化合物是一种用途广泛的层状材料，其潜在应用范围从光电子器件到水裂解。自上而下的制造方法（如剥离）对于大规模生产高质量器件并不实用：自下而上的方法（如溅射，一种低温沉积方法）更适合。然而，由于其各向异性的性质，二硫化钼（MoS 2）通过溅射的生长机制是复杂的，仍有待详细研究。本文研究了用硫热唇电池和钼靶反应溅射共沉积的MoS 2薄膜的生长。系统地研究了S分压对MoS2薄膜结构和形貌的影响，发现薄膜生长以垂直取向的片状结构为主，并伴有水平分支，形成树枝状结构.该结构的生长前沿归因于吸附原子相对于MoS2取向的各向异性结合。
Transition metal dichalcogenides are versatile layered materials with potential applications ranging from optoelectronic devices to water splitting. Top-down fabrication methods such as exfoliation are not practical for a large-scale production of high-quality devices: a bottom-up approach such as sputtering, a low-temperature deposition method, is more suitable. However, due to its anisotropic nature, the growth mechanism of molybdenum disulfide (MoS 2) via sputtering is complex and remains to be investigated in detail. In this paper, we study the growth of MoS 2 films co-deposited by using a sulfur (S) hot-lip cell and a molybdenum (Mo) sputtering target via reactive sputtering. The impact of S partial pressure on the structure and morphology of MoS 2 films was systematically characterized, and it was observed that the growth is dominated by vertically-oriented sheets with horizontal branches, resulting in a tree-like structure. The growth front of the structures is ascribed to the anisotropic incorporation of adatoms with regards to the orientation of MoS 2.