Filling of mesoporous silicon with copper by electrodeposition from an aqueous solution
Filling of mesoporous silicon with copper by electrodeposition from an aqueous solution
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DOI：
10.1016/j.electacta.2008.10.024
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发表时间：
2009-03-01
影响因子：
6.6
通讯作者：
Ogata, Yukio H.
中科院分区：
文献类型：
--
作者：
Fukami, Kazuhiro;Tanaka, Yuki;Ogata, Yukio H.
研究了高掺杂p型硅中孔中铜的填充。当以非常小的恒流密度（-6.4 μ Acm(-2)）进行铜电沉积时，深度为4 μ m的介孔从底部到开口连续充满铜。当电沉积电流的绝对值为上述条件的两倍时，分离颗粒在介孔中电沉积。充填深度对充填行为也有影响。即使在长度为4 μ m的孔隙被完全填充的情况下，深度为8 μ m的孔隙也没有连续被铜填充。用一个简单的模型模拟了介孔中的电沉积行为。数值模拟结果表明，在极小的电流条件下，介孔中可以实现限制扩散的电沉积，而在平面电极上则从未实现过限制扩散的条件。(C) 2008 Elsevier Ltd版权所有。
Copper filling into mesopores formed in highly doped p-type silicon was investigated. When the copper electrodeposition was carried out at a very small constant current density (-6.4 mu Acm(-2)), the mesopores with 4 mu m depth were filled with copper continuously from the bottom to the opening. When the electrodeposition current was set at an absolute value twice as large as in the above condition, the isolated particles were electrodeposited in the mesopores. The depth also affected the filling behavior. The pores with 8 mu m in depth were not continuously filled with copper even in the condition at which the pores of 4 mu m in length were completely filled. Electrodeposition behavior in mesopores was also simulated using a simple model. The numerical simulation suggested that the diffusion-limited electrodeposition could be achieved in mesopores at a very small current, at which the diffusion-limited condition had never been realized on a planar electrode. (C) 2008 Elsevier Ltd. All rights reserved.