TEMPERATURE CONTROLLED RTS NOISE FROM A SINGLE INGAAS QUANTUM DOT
TEMPERATURE CONTROLLED RTS NOISE FROM A SINGLE INGAAS QUANTUM DOT
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来自单个 INGAAS 量子点的温控 RTS 噪声
DOI：
10.1142/9789812811165_0081
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Tacano
中科院分区：
文献类型：
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作者：
Y. Awano;M. Shima;Y. Sakuma;Y. Sugiyama;N. Yokoyama;M. Tacano
在（111）B GaAs衬底上制作了一种四面体凹槽结构的AlGaAs/InGaAs异质结场效应晶体管（FET）存储单元，并对其RTS特性进行了研究。TSR-FET存储器单元在凹部的（111）A小面表面上具有沟道，并且在底部具有作为浮置栅极的单个空穴俘获量子点（QD）。在低于130 K的温度下实现了存储器操作，并研究了随机电报信号（RTS）随温度的变化。观察到从QD进出的单个空穴为70 nA的电流阶跃，具有洛伦兹分布的典型时间间隔。在TSR量子点的空穴捕获和发射过程的活化能估计为260和190毫电子伏，分别。
An AlGaAs/InGaAs heterojunction field-effect transistor(FET) memory cell in a tetrahedral-shaped recess (TSR) on the (111)B GaAs substrate was fabricated and its RTS characteristics were investigated. The TSR-FET memory cell has a channel on the (111)A facet surfaces of the recess and a single hole-trapping quantum dot (QD) as a floating gate at the bottom. Memory operations were achieved at temperatures below 130 K, and random telegraph signals (RTSs) were investigated as a function of temperature. Single hole coming in and out from the QD is observed as a current step of 70 nA with the typical time interval of a Lorentzian distribution. The activation energy of hole capture and emission processes in the TSR QD were estimated to be 260 and 190 meV, respectively.