Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy
Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy
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DOI：
10.1063/1.3491551
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发表时间：
2010-09-20
影响因子：
4
通讯作者：
Towe, E.
中科院分区：
文献类型：
--
作者：
Gaan, S.;He, Guowei;Towe, E.
用截面扫描隧道显微镜和光谱学研究了分子束外延生长的InAs/GaAs量子点异质结构。单个InAs QD在图像中被解析。从量子点获得的3-4 nm的Tunnel光谱显示出位于GaAs带隙的上部的峰，其源自最低的电子限制态，以及从空穴限制态延伸出的价带的尾部。采用线形分析法推导了电子和空穴量子点态的结合能。(C)2010年美国物理学会。[doi：10.1063/1.3491551]
InAs/GaAs quantum-dot (QD) heterostructures grown by molecular-beam epitaxy are studied using cross-sectional scanning tunneling microscopy and spectroscopy. Individual InAs QDs are resolved in the images. Tunneling spectra acquired 3-4 nm from the QDs show a peak located in the upper part of the GaAs band gap originating from the lowest electron confined state, together with a tail extending out from the valence band from hole confined states. A line-shape analysis is used to deduce the binding energies of the electron and hole QD states. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3491551]