Phosphorus and arsenic profile control for high performance epitaxial base bipolar junction devices
Phosphorus and arsenic profile control for high performance epitaxial base bipolar junction devices
复制标题
高性能外延基双极结器件的磷和砷分布控制
DOI：
10.1063/1.124516
复制
发表时间：
1999
影响因子：
4
通讯作者：
P. Westrom
中科院分区：
文献类型：
--
作者：
R. Bashir;A. Kabir;P. Westrom
In this study, we report on the incorporation behavior of n-type species in undoped layers grown subsequent to doped layers at low temperature (700–750 °C) reduced pressure chemical vapor deposition of silicon/silicon germanium (Si/Si1−xGex) performed in a single wafer epitaxial deposition system. Significant amounts of these species are observed even in an undoped layer grown subsequent to the doped layer. The presence of these dopants in the subsequently grown undoped layer is attributed to segregation at the moving growth interface. The arsenic segregation is confirmed to be significantly higher than phosphorus. In addition, an increase in both the phosphorus and arsenic incorporation is observed in the presence of a highly doped boron layer.
