Phase growth in an amorphous Si-Cu system, as shown by a combination of SNMS, XPS, XRD and APT techniques
Phase growth in an amorphous Si-Cu system, as shown by a combination of SNMS, XPS, XRD and APT techniques
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DOI：
10.1016/j.actamat.2013.08.021
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发表时间：
2013-11
期刊：
影响因子：
9.4
通讯作者：
B. Parditka;B. Parditka;M. Verezhak;M. Verezhak;Z. Balogh;A. Csík;G. Langer;D. Beke;Mohammed Sirage
中科院分区：
文献类型：
--
作者：
B. Parditka;B. Parditka;M. Verezhak;M. Verezhak;Z. Balogh;A. Csík;G. Langer;D. Beke;Mohammed Sirage
结合二次中性质谱（SNMS）、X射线衍射（XRD）和原子探针层析成像（APT）研究表明，在408 K时，非晶Si和纳米晶Cu薄膜之间的Cu 3Si晶化层的生长遵循线性规律，Cu 3Si/Cu和Cu 3Si/非晶Si界面的位移对该相的生长贡献大致相等。它还示出了，Si原子扩散到纳米晶Cu的晶界迅速，导致Si偏析的外表面上，并在整体的Cu层内的Si含量的增加。SNMS和APT的结果表明，即使在非晶Si上的Cu的沉积过程中，在界面处形成的混合区域（约10 nm厚）。这很容易转变成均匀的Cu 3Si结晶反应层，其进一步生长，显然遵循界面控制的线性动力学。
It is shown, by the combination of secondary neutral mass spectrometry (SNMS), X-ray diffraction and atom probe tomography (APT), that the growth of a Cu3Si crystalline layer between amorphous Si and nanocrystalline Cu thin films at 408 K follows a linear law and the shifts of the Cu3Si/Cu and Cu3Si/amorphous Si interfaces contribute approximately equally to the growth of this phase. It is also illustrated that the Si atoms diffuse rapidly into the grain boundaries of the nanocrystalline Cu, leading to Si segregation on the outer surface and to an increase in the overall Si content inside the Cu layer. Both the SNMS and APT results indicate that, even during the deposition of Cu on the amorphous Si, an intermixed region (of about 10 nm thick) is formed at the interface. This readily transforms into a homogeneous Cu3Si crystalline reaction layer which grows further, apparently following an interface-controlled linear kinetics.