Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for micrbelectromechanical system fabrication
Deep dry etching of borosilicate glass using fluorine-based high-density plasmas for micrbelectromechanical system fabrication
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DOI：
10.1116/1.1612935
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发表时间：
2003-09-01
影响因子：
1.4
通讯作者：
Horiike, Y
中科院分区：
文献类型：
--
作者：
Ichiki, T;Sugiyama, Y;Horiike, Y
用于微机电的制造。系统设备中，使用 SF6/Ar 感应耦合等离子体研究了硼硅酸盐玻璃（即将推出的 7740）的深沟槽蚀刻。由于硼硅酸盐玻璃含有产生非挥发性氟化物的金属元素，其光滑表面的干法蚀刻是一个难题。本文基于对衬底偏压功率和 Ar 添加量对去除通过衬底表面附近蚀刻产物的反向散射沉积的不挥发氟化物残留物的影响的综合实验研究结果，讨论了蚀刻具有光滑表面和高掩模选择性的玻璃的必要条件。在优化的刻蚀条件下，使用3μm厚的铬金属掩模完成了硼硅酸盐玻璃深度32μm、宽度15μm的深沟槽刻蚀。 (C) 2003 年美国真空协会。
For the fabrication of microelectromechanical. system devices, deep trench etching of borosilicate glass (Coming 7740) has been investigated using SF6/Ar inductively coupled plasma. Since borosilicate glass contains metal elements which produce nonvolatile fluorides, dry etching of its smooth surface is a difficult issue. In this article, requisite conditions for etching glass with a smooth surface and high mask selectivity have been discussed on the basis of the results of a comprehensive experimental study of the effects of substrate bias power and Ar addition on the removal of involatile fluoride residues deposited via the backscattering of etch products in the vicinity of the substrate surface. Under optimized etching conditions, deep trench etching of borosilicate glass to 32 mum depth and 15 mum width has been accomplished using 3-mum-thick chrome metal masks. (C) 2003 American Vacuum Society.