Effect of surface free energy of underlayer materials on crystal growth of Co polycrystalline films
Effect of surface free energy of underlayer materials on crystal growth of Co polycrystalline films
复制标题
底层材料表面自由能对Co多晶薄膜晶体生长的影响
DOI：
10.1063/1.361510
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
Y. Shimada
中科院分区：
文献类型：
--
作者：
O. Kitakami;S. Okamoto;Y. Shimada
研究了在不同衬底上溅射多晶Co薄膜的晶体织构。多晶Co薄膜的织构对衬底材料有很大的依赖性，这种依赖性可以通过考虑衬底材料（γu）和Co（γCo）之间的表面自由能差来解释。当γu大于γCo时，Co薄膜可以生长具有hcp-Co（001）的明确晶体学织构，这是最低表面能晶面，以使总表面能最小化。相反，当γu远小于γCo时，Co薄膜的晶体结构中没有明显的底层效应。
Crystallographic texture of polycrystalline Co films prepared by sputtering on a variety of underlayers has been investigated. The texture of polycrystalline Co films greatly depends on underlayer material, and this dependence is well explained by taking into account the surface free energy difference between the underlayer material (γu) and Co (γCo). When γu is larger than γCo, Co films can be grown with a well‐defined crystallographic texture of hcp‐Co(001), which is the lowest surface energy crystal plane in order to minimize the total surface energy. In contrast, if γu is much smaller than γCo, no remarkable underlayer effects can be observed in the crystallographic structure of Co films.