1.5μm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency
1.5μm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency
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DOI：
10.1117/12.2209085
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发表时间：
2016-03
期刊：
影响因子：
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通讯作者：
S. Banyoudeh;A. Abdollahinia;V. Sichkovskyi;J. Reithmaier
中科院分区：
文献类型：
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作者：
S. Banyoudeh;A. Abdollahinia;V. Sichkovskyi;J. Reithmaier
采用固体源分子束外延（SSMBE）技术生长了InP衬底上的自组织InAs量子点（QD）激光器。六个InAs QD层具有高点密度和高度均匀的点尺寸被用作活性介质。对不同腔长的宽面（BA）和脊形波导（RWG）激光器进行了加工和表征。还研究了生长后快速热退火（RTA）工艺对激光特性的影响。激光器显示出每点层12 - 14.5 cm-1的高模式增益和每点层120 A/cm 2的无限腔长的阈值电流密度。在脉冲操作中，腔长为292 μm的解理BA激光器可以在高达120 °C的温度下工作。在T0 = 125 K（20 °C至45 °C）和T0 = 100 K至120 °C时获得了高特征温度值。约0.28 W/A的斜率效率可以在高达100 °C的宽工作温度范围内保持恒定。在15 °C下，腔长388 μm的RWG激光器在脉冲模式下的最大输出功率为120 mW，斜率效率为0.42 W/A。激光器可以在150 °C下以25 mW的输出功率工作。这些结果非常好地证明了在接近理想的QD激光器中预期的温度不敏感的激光性能，这是由于在跃迁能量处局部化的状态的高密度，这允许非常鲁棒的基态激光。
Self-organized InAs quantum dot (QD) lasers based on InP substrate were grown by means of solid source molecular beam epitaxy (SSMBE). Six InAs QD layers with high dot density and highly uniform dot sizes were used as active medium. Broad area (BA) and ridge waveguide (RWG) lasers with different cavity lengths were processed and characterized. Also the influence of a post-growth rapid thermal annealing (RTA) process on the laser characteristics was investigated. The lasers showed a high modal gain of 12 - 14.5 cm-1 per dot layer and a threshold current density for infinite cavity length of 120 A/cm2 per dot layer. In pulsed operation, as-cleaved BA lasers with a cavity length of 292 μm can be operated up to 120 °C. High characteristic temperature values were obtained with T0 = 125 K (20 °C to 45 °C) and T0 = 100 K up to 120 °C. The slope efficiency of about 0.28 W/A can be kept constant over a wide operating temperature range of up to 100 °C. Mounted RWG lasers with 388 μm cavity length and operated in pulsed mode showed a maximum output power of 120 mW a slope efficiency of 0.42 W/A at 15 °C. The lasers can be operated at 150 °C with 25 mW output power. These results demonstrate very well the temperature insensitive lasing performance expected in nearly ideal QD lasers due to the high density of states localized at the transition energy, which allow a very robust ground state lasing.