A novel Ba4Gd3K3(PO4)(6)F-2:Eu2 blue-white emitting phosphor for near-ultraviolet excited light-emitting diodes
A novel Ba4Gd3K3(PO4)(6)F-2:Eu2 blue-white emitting phosphor for near-ultraviolet excited light-emitting diodes
复制标题
一种用于近紫外激发发光二极管的新型Ba4Gd3K3(PO4)(6)F-2:Eu2蓝白光荧光粉
DOI：
10.1016/j.jlumin.2019.05.020
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发表时间：
2019
影响因子：
3.6
通讯作者：
Li Guangshe
中科院分区：
文献类型：
--
作者：
Leng Zhihua;Yang Wei;Huang Weifeng;Li Liping;Zhang Dan;Wu Xiufeng;Li Guangshe
开发具有宽带发射的新型荧光粉可以在白色发光二极管（w-LED）中找到潜在的应用。然而，在单一激活剂掺杂的磷光体中实现宽带发射仍然是一个严峻的挑战。本文报道了一种新型的磷灰石型Ba_4Gd_3K_3（PO_4）_6F_2：Eu ~（2+）荧光粉，该荧光粉具有宽带蓝白色发光，几乎覆盖了整个可见光范围。与以前的报道不同，我们证明了这种宽带发射是由Eu ~（2+）离子分别在M（1），Gd（2）和K（3）位的容纳引起的。发射光谱和发光衰减曲线进一步证实了Ba_4Gd_3K_3（PO_4）_6F_2：Eu ~（2+）荧光粉中存在三个发射中心。在395 nm LED芯片上沉积Ba 4Gd 3 K3（PO 4）6 F2：Eu 2+和红色荧光粉CaAlSiN 3：Eu 2+，可获得Ra = 81，CCT = 3780 K的白色LED。此外，所制备的Ba 4Gd 3 K3（PO 4）6 F2：Eu 2+荧光粉在高温下具有稳定的颜色输出，有望成为下一代近紫外激发白色LED的候选材料。
Exploring new phosphors with broadband emission could find potential applications in white light emitting diodes (w-LEDs). However, it is still a severe challenging to achieve a broadband emission in single activator doped phosphors. Herein, we reported a novel apatite-type Ba4Gd3K3(PO4)6F2:Eu2+phosphor with broadband blue-white emission, which almost cover the whole visible light range. Differing from previous reports, we prove that the broadband emission is originated from the accommodation of Eu2+ions in the M(1), Gd(2) and K(3) sites, respectively. Emission spectrum and luminescence decay curves further confirm the existence of three emission centers in Ba4Gd3K3(PO4)6F2:Eu2+phosphor. White LED (Ra = 81 and CCT = 3780K) can be obtained by depositing Ba4Gd3K3(PO4)6F2:Eu2+and red-emitting CaAlSiN3:Eu2+phosphors on 395 nm LED chip. Moreover, the as-obtained Ba4Gd3K3(PO4)6F2:Eu2+phosphor can give an stable color output at high temperature, demonstrating that this novel phosphor could be an potential candidate for next-generation near ultraviolet excited white LEDs.