Symmetric Si/Si1−xGex electron resonant tunneling diodes with an anomalous temperature behavior
Symmetric Si/Si1−xGex electron resonant tunneling diodes with an anomalous temperature behavior
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具有异常温度行为的对称 Si/Si1−xGex 电子谐振隧道二极管
DOI：
10.1063/1.108869
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发表时间：
1993
影响因子：
4
通讯作者：
J. Sturm
中科院分区：
文献类型：
--
作者：
Ž. Matutinović‐Krstelj;Chih;X. Xiao;J. Sturm
我们报道了在Si/Si1−xGex材料体系中通过快速热化学气相沉积生长的对称n型谐振隧道二极管的制造。对于正偏置和负偏置，最多可观察到四个共振特征。这是第一次在Si/SiGe材料体系中报道电子共振隧穿的高度对称特征。在4 K的温度下，峰谷比为2，在240 K的温度下可以观察到共振。在低电压下观察到一个额外的峰，表现出异常的温度行为，在低于50 K的温度下消失。涉及声子吸收或发射极量子化的模型被提出来解释这种行为。
We report the fabrication of symmetric, n‐type resonant tunneling diodes grown by rapid thermal chemical vapor deposition in the Si/Si1−xGex material system. Up to four resonant features were observed for both positive and negative bias. This is the first time that such highly symmetric features are reported for electron resonant tunneling in the Si/SiGe material system. A peak‐to‐valley ratio of 2 was achieved at a temperature of 4 K and resonances were observed up to 240 K. An additional peak is observed at low voltages exhibiting an anomalous temperature behavior, disappearing at temperatures below 50 K. Models involving phonon absorption or emitter quantization are proposed to explain this behavior.