Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments
Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments
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DOI：
10.7567/jjap.53.021001
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发表时间：
2014-01
影响因子：
1.5
通讯作者：
A. Hattori;K. Hattori;Y. Moriwaki;A. Yamamoto;Shun Sadakuni;J. Murata;Kenta Arima;Y. Sano;K. Yamauchi;H. Daimon;K. Endo
中科院分区：
文献类型：
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作者：
A. Hattori;K. Hattori;Y. Moriwaki;A. Yamamoto;Shun Sadakuni;J. Murata;Kenta Arima;Y. Sano;K. Yamauchi;H. Daimon;K. Endo
在超高真空条件下，利用光致发光技术研究了表面干净、轮廓清晰的GaN（0001）单晶的光致发光（PL）效率。我们发现了典型的降解因素：顶部表面的天然氧化物，下层表面的损伤层，以及块状GaN内部的氢化非辐射态。通过消除降解因素，实现了比接收样品高约120倍的带间PL强度。讨论了发光效率的提高机理，并提出了氢在GaN晶体中的作用。
We investigated the photoluminescence (PL) efficiency of GaN(0001) single crystals with clean and well-defined surfaces using the PL technique in ultrahigh vacuum in situ. We found typical degradation factors: native oxides at the top surface, damaged layers in the subsurface, and hydrogenated non-radiative states inside bulk GaN. By eliminating the degradation factors, a band-to-band PL intensity of approximately 120 times higher than that of the as-received samples was achieved. The PL efficiency enhancement mechanism is discussed, and the role of hydrogen in GaN crystals is proposed.