Fine Pattern Replication by EUV Lithography
Fine Pattern Replication by EUV Lithography
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通过 EUV 光刻复制精细图案
DOI：
10.2494/photopolymer.14.567
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发表时间：
2001
影响因子：
0.8
通讯作者：
M. Hosoya
中科院分区：
文献类型：
--
作者：
K. Hamamoto;Takeo Watanabe;H. Tsubakino;H. Kinoshita;T. Shoki;M. Hosoya
描述了在NewSUBARU光束线上利用三非球面反射镜系统进行精细图案复制。曝光系统由3个非球面反射镜组成，曝光孔径为0.1。在10mm×2mm曝光区曝光60nm衍射极限分辨率。采用湿法刻蚀法制备的Cr掩模图案用于极紫外光刻掩模。用该Cr掩模和ZEP520和SAL601光刻胶可形成100nm以下的图案。用ZEP520制备了宽60nm的线纹和空纹。此外，据了解，分离株的宽度为43nm。并复制了150nm的孔洞图案。
Fine pattern replication utilizing 3-aspherical mirror system settled on NewSUBARU beamline is described. The exposure system is composed of three aspherical mirrors, and the NA is 0.1. The diffraction limited resolution of 60nm was exposed on exposure area of 10mm×2mm. The Cr mask pattern fabricated by the wet etching method was used for the extreme ultraviolet lithography mask. The pattern of 100nm or less can be formed by with this Cr mask, and using photoresist of ZEP520 and SAL601. The line and space pattern width of 60nm was fabricated with ZEP520. In addition, it has been understood that the isolation line of 43nm width was replicated. Furthermore the hole pattern of 150nm was replicated.