Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects
Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects
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DOI：
10.1088/0957-4484/22/8/085302
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发表时间：
2011-02-25
期刊：
影响因子：
3.5
通讯作者：
Vereecken, Philippe M.
中科院分区：
文献类型：
--
作者：
Chiodarelli, Nicolo';Masahito, Sugiura;Vereecken, Philippe M.
碳纳米管（CNT）是一种具有制造未来微芯片中亚20 nm高纵横比垂直互连的潜力的材料。然而，为了在与已建立的钨或铜基互连的竞争中取得成功，CNT必须实现其承诺，即还使用与硅技术完全兼容的可扩展集成工艺在集成结构中提供低电阻。因此，在我们能够充分利用其潜力之前，需要精心设计的增长和整合解决方案。这项工作解决的问题，优化CNT集成过程中，从电气的角度来看。测量CNT电阻作为CNT长度的函数的技术在这里扩展到CNT集成在垂直接触。这允许提取CNT的线性电阻率和接触电阻，据我们所知，这两个参数从未针对垂直CNT接触单独报道过，并且这是最重要的，因为它们分别测量CNT的质量和它们的金属接触的质量。所提出的技术允许电区分每个处理步骤单独对CNT电阻率和CNT接触电阻的影响。因此，它构成了一种用于优化工艺和开发上级质量的CNT接触的强大技术。这不仅对于互连，而且对于依赖于在低温下用催化化学气相沉积方法生长的CNT的电性能的所有那些应用都具有相关的技术重要性。
Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.