Electrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al
Electrical transport between a MoS2-based electric double-layer transistor and normal and superconducting Al
复制标题
MoS2 基双电层晶体管与普通和超导 Al 之间的电传输
DOI：
10.1088/1742-6596/969/1/012057
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Ishiguro R
中科院分区：
文献类型：
--
作者：
Aikawa Y;Tsumura K;Narita T;Takayanagi H;Ishiguro R
我们提出了一种基于二硫化钼的原子层双电层晶体管与铝膜之间的结的制造，以及二硫化钼（MoS 2）载流子由于其双电层晶体管和传统超导铝在界面处的肖特基势垒而产生的强电场诱导的电输运测量。在稀释制冷机温度的微分电阻测量中，观察到超导间隙结构。由于间隙结构在约900mK时消失，该结构的温度变化是由于铝的超导性引起的。而对于间隙结构的磁场变化，则需要考虑两种超导态在结处共存的可能性。
We present fabrication of a junction between an atomic layer molybdenum disulfide-based electric double layer transistor and an aluminum film, and electrical transport measurements between molybdenum disulfide (MoS 2) carriers induced by strong electric fields due to its electric double-layer transistor and a conventional superconducting aluminum though Schottky barrier at the interface. A superconducting gap structure was observed in the differential resistance measurement of the dilution refrigerator temperature. Since the gap structures disappeared at about 900mK, the temperature change of this structure is caused due to aluminum superconductivity. However, as for the magnetic field change of the gap structures, the possibility of the coexistence of two kinds of superconducting states at the junction would be considered.