Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend
Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend
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DOI：
10.1038/nnano.2016.87
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发表时间：
2016-09-01
影响因子：
38.3
通讯作者：
Samori, Paolo
中科院分区：
文献类型：
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作者：
Leydecker, Tim;Herder, Martin;Samori, Paolo
有机纳米材料在逻辑电路、显示器和太阳能电池等柔性电子应用中的应用引起了人们的极大兴趣。这些技术已经展示了良好的性能，但灵活的有机存储器尚未在波动性、工作电压、写入/擦除速度以及可达到的不同级别的数量方面兑现其所有承诺。在这里，我们报告了一种多级非易失性柔性光学存储薄膜晶体管，其基于参考聚合物半导体（即聚（3-己基噻吩））和光致变色二芳基乙烯的混合物，通过紫外光和绿光照射进行切换。制造了具有超过 256 个（8 位存储）不同电流水平的三端器件，其存储状态可以通过 3 ns 激光脉冲进行切换。我们还报告了超过 70 个写擦除周期的稳健性和超过 500 天的非易失性。该设备在柔性聚对苯二甲酸乙二醇酯基板上实现，验证了集成到可穿戴电子产品和智能纳米设备中的概念。
Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.