Monolithic Quantum Dot Discrete Mode Laser on SOI
Monolithic Quantum Dot Discrete Mode Laser on SOI
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DOI：
10.1021/acsphotonics.3c00172
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发表时间：
2023-05
期刊：
影响因子：
7
通讯作者：
Jingzhi Huang;Wenqi Wei;Bo Yang;Dong Han;Zihao Wang;Jianjun Zhang;Ting Wang
中科院分区：
文献类型：
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作者：
Jingzhi Huang;Wenqi Wei;Bo Yang;Dong Han;Zihao Wang;Jianjun Zhang;Ting Wang
硅平台上的单纵模光源在数据传输、集成片上光学互连和光学测距方面表现出巨大的潜力。这里展示了一种独特的 InAs/GaAs 量子点离散模式 (DM) 激光器，直接生长在带有嵌入式硅光栅的绝缘体上硅 (SOI) 基板上，该激光器无需再生长，并且与集成硅光子学兼容。由于折射率扰动和来自 SOI 基板上预先图案化的嵌入式硅光栅的光学反馈，该 DM 激光器可以提供稳定的单模操作，阈值电流为 45 mA，输出功率为 9 mW。光线宽为 157 kHz 时，实现的最大光信噪比 (OSNR) 为 43.6 dB。 3 dB 直接调制带宽测量为 3.6 GHz。 DM 激光器可采用不归零 (NRZ) 调制格式进行 70 Gbit/s 的外部调制，采用 4 级脉冲幅度 (PAM4) 调制格式进行 80 Gbit/s 的外部调制。这种基于 SOI 的 DM 激光器为大规模、高功率片上集成激光器铺平了道路。
Single-longitudinal-mode light sources on a silicon platform exhibit tremendous potential in data transmission, integrated on-chip optical interconnects, and optical ranging. A unique InAs/GaAs quantum dot discrete mode (DM) laser directly grown on a silicon-on-insulator (SOI) substrate with embedded silicon gratings has been demonstrated here, which is regrowth-free and compatible with integrated silicon photonics. Attributed to refractive index perturbation and optical feedback from embedded silicon gratings prepatterned on the SOI substrate, this DM laser can provide stable single-mode operation with a threshold current of 45 mA and an output power of 9 mW. The maximum optical signal-to-noise ratio (OSNR) achieved is 43.6 dB with an optical linewidth of 157 kHz. The 3 dB direct modulation bandwidth is measured as 3.6 GHz. The DM laser can be externally modulated at 70 Gbit/s with non-return-to-zero (NRZ) modulation format and 80 Gbit/s under 4-level pulsed amplitude (PAM4) modulation format. Such SOI-based DM laser paves the way toward large-scale and high-power on-chip integrated lasers.