Highly Uniform Regrown In0.53Ga0.47As/AlAs/InAs Resonant Tunneling Diodes on In0.53Ga0.47As
Highly Uniform Regrown In0.53Ga0.47As/AlAs/InAs Resonant Tunneling Diodes on In0.53Ga0.47As
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In0.53Ga0.47As 上的高度均匀再生长 In0.53Ga0.47As/AlAs/InAs 谐振隧道二极管
DOI：
10.1143/jjap.38.1204
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Yamamoto
中科院分区：
文献类型：
--
作者：
J. Osaka;K. Maezawa;H. Yamamoto
通过对分子束外延（MBE）过生长前的氧化层去除条件的研究，成功地实现了在与InP衬底晶格匹配的InGaAs层上再生长赝晶In0.53Ga0.47As/AlAs/InAs共振隧穿二极管（RTD）。通过原子力显微镜（AFM）和二次离子质谱（西姆斯）评估的天然氧化物去除表面的质量以及通过AFM评估的再生长表面的质量表明，最佳天然氧化物去除温度的窗口非常窄：535±10°C。在2°圆片上，用金属有机化学气相沉积（MOCVD）生长的高电子迁移率晶体管（HEMT）顶层再生长的RTD的峰值电流标准偏差（RSD）低至3%，与直接用分子束外延（MBE）生长的RTD/HEMT的峰值电流标准偏差基本相同。
The molecular beam epitaxial (MBE) regrowth of pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes (RTDs) onto an InGaAs layer lattice-matched to InP substrate is successfully achieved by elaborating native-oxide-removal conditions prior to MBE overgrowth. The quality of native-oxide removed surface, as assessed by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS), and the quality of regrown surface, as assessed by AFM, shows that the window for the optimum native-oxide-removal temperature is very narrow: 535±10°C. The peak current standard deviation of the RTDs regrown on the top layer of high electron mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) is as low as 3% over a 2° wafer, which is almost same as that of RTDs/HEMTs directly grown by MBE.