Group III Elemental Composition Dependence of RbF Postdeposition Treatment Effects on Cu(In,Ga)Se2 Thin Films and Solar Cells
Group III Elemental Composition Dependence of RbF Postdeposition Treatment Effects on Cu(In,Ga)Se2 Thin Films and Solar Cells
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DOI：
10.1021/acs.jpcc.8b00079
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发表时间：
2018-02
影响因子：
3.7
通讯作者：
S. Ishizuka;N. Taguchi;J. Nishinaga;Y. Kamikawa;Shingo Tanaka;H. Shibata
中科院分区：
文献类型：
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作者：
S. Ishizuka;N. Taguchi;J. Nishinaga;Y. Kamikawa;Shingo Tanaka;H. Shibata
比较研究了径向基函数后处理(RBF-PDT)对Cu(In，Ga)Se_2、CuInSe_2和CuGaSe_2薄膜及太阳电池器件的影响。与KF后沉积处理(KF-PDT)的效果相似，Cu(In，Ga)Se_2和CuInSe_2薄膜表面有明显的气孔形成，导致RBF-PDT的表面形貌粗糙，而不含In的CuGaSe_2则不是这样。含In和不含In的Cu(In，Ga)Se_2太阳电池的器件性能也显示出不同的结果，即，随着RBF-PDT的加入，Cu(In，Ga)Se_2和CuInSe_2太阳电池的开路电压(VOC)和填充因子(FF)值增加，而短路电流密度(JSC)值几乎保持不变或略有下降，而CuGaSe_2太阳电池的VOC和FF值没有显著改善，而JSC值却显著增加。这些结果表明，碱对Cu(In，Ga)Se_2薄膜和器件性能的影响很大程度上依赖于Cu(In，G)Se_2薄膜中的III族元素组成。
The effects of RbF postdeposition treatment (RbF-PDT) on Cu(In,Ga)Se2, CuInSe2, and CuGaSe2 thin films and solar cell devices are comparatively studied. Similar to the effect of the KF postdeposition treatment (KF-PDT), Cu(In,Ga)Se2 and CuInSe2 film surfaces show significant pore formation resulting in a rough surface morphology with RbF-PDT, whereas this is not the case for In-free CuGaSe2. The device properties of the In-containing and In-free Cu(In,Ga)Se2 solar cells also show contrasting results, namely, Cu(In,Ga)Se2 or CuInSe2 devices show an increase in the open circuit voltage (Voc) and fill factor (FF) values and almost constant or a slight decrease in the short-circuit current density (Jsc) values with RbF-PDT, whereas CuGaSe2 devices show no significant improvements in the Voc and FF values but a substantial increase in the Jsc values. These results suggest that the alkali effects on the Cu(In,Ga)Se2 film and device properties strongly depend on the group III elemental composition in the Cu(In,G...