Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence
Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence
复制标题
DOI：
10.1002/pssc.200565411
复制
发表时间：
2006-06
期刊：
影响因子：
--
通讯作者：
R. Martin;D. Rading;R. Kersting;E. Tallarek;E. Nogales;D. Amabile;K. Wang;V. Katchkanov;C. Trager-Cowan;K. O'Donnell;I. Watson;V. Matias;A. Vantomme;K. Lorenz;E. Alves
中科院分区：
文献类型：
--
作者：
R. Martin;D. Rading;R. Kersting;E. Tallarek;E. Nogales;D. Amabile;K. Wang;V. Katchkanov;C. Trager-Cowan;K. O'Donnell;I. Watson;V. Matias;A. Vantomme;K. Lorenz;E. Alves
Eu和Er离子注入到AlInN/GaN双层的深度分布和发光的调查区分位于两个不同的III-N主机之间的离子。利用飞行时间二次离子质谱仪研究了使用沟道或离轴几何形状注入的样品之间的差异。一部分离子已经穿过AlInN层（130或250 nm厚）并到达下面的GaN。作为入射电子能量和光致发光激发数据的函数的阴极发光光谱区分AlInN和GaN内的离子。从AlInN的稀土发射是更广泛的和红移的强度依赖于主机进行了讨论。（© 2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Investigation of the depth profiles and luminescence of Eu and Er-ions implanted into AlInN/GaN bilayers differentiates between ions located in the two different III-N hosts. Differences between samples implanted using channeling or off-axis geometries are studied using time-of-flight secondary ion mass spectometry. A fraction of ions have crossed the AlInN layer (either 130 or 250 nm thick) and reached the underlying GaN. Cathodoluminescence spectra as a function of incident electron energy and photoluminescence excitation data distinguish between ions within AlInN and GaN. The RE emission from the AlInN is broader and red-shifted and the dependence of the intensity on host is discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)