Scaleable vanadium dioxide switches with submillimeterwave bandwidth: VO2 switches with impoved RF bandwidth and power handling
Scaleable vanadium dioxide switches with submillimeterwave bandwidth: VO2 switches with impoved RF bandwidth and power handling
复制标题
具有亚毫米波带宽的可扩展二氧化钒开关：具有改进的射频带宽和功率处理能力的 VO2 开关
DOI：
10.1109/csics.2017.8240450
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Z. Griffith
中科院分区：
文献类型：
--
作者：
C. Hillman;P. Stupar;Z. Griffith
新一代的二氧化钒相变开关已经设计，制造和表征。这些开关被设计成显著地减少与开关的加热器相关联的导通状态分流电容，同时还增加关断状态电阻。其结果是一个开关架构，其通道尺寸可以扩展，以增加功率处理，同时保持无与伦比的低损耗。我们将介绍在230 GHz下通态插入损耗<1 dB、功率处理为1 W的SPST开关，以及在67 GHz下功率处理为5 W、插入损耗仅为0.6 dB的开关。我们还提出了一个MMIC单刀双掷开关具有插入损耗< 0.6 dB and isolation >35 dB，从直流到67 GHz，同时提供1W的功率处理。在毫米波带宽下，可以实现各种SPNT开关设计。我们还没有发现任何开关技术具有优越的上级带宽和低插入损耗。
A new generation of vanadium dioxide phase change switches have been designed, fabricated, and characterized. These switches were designed to dramatically reduce on-state shunt-capacitance associated with the switch's heater while also increasing the off-state resistance. The result is a switch architecture whose channel dimensions can be scaled to increase power handling while maintaining unparalleled low loss. We will present SPST switches with on-state insertion loss < 1dB at 230GHz and power handling of 1W as well as switches with 5W of power handling and only 0.6 dB insertion loss at 67 GHz. We also present a MMIC SPDT switch having insertion loss < 0.6 dB and isolation > 35 dB from DC to 67 GHz while offering 1W power handling. A wide variety of SPNT switch designs is possible with MMW bandwidth. We have not identified any switch technology having reported superior bandwidth and low insertion loss.