Photo-induced metastability in amorphous semiconductors
Photo-induced metastability in amorphous semiconductors
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DOI：
10.1016/s0022-3093(05)80044-4
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发表时间：
1991
影响因子：
3.5
通讯作者：
Kazunobu Tanaka
中科院分区：
文献类型：
--
作者：
Kazunobu Tanaka
非晶态半导体中各种光诱导现象的亚稳性和可逆性已经得到了广泛的研究。在这次演讲的引言部分，我们从现象学的角度简要回顾了这些亚稳态效应。主要集中在非晶态硅中的光致电子自旋共振中心，其g值分别为2.005、2.004和2.01.用脉冲电子自旋回波技术进行的电子自旋回波调制实验表明：(1)在光生悬挂键缺陷(以及自然缺陷)中，(2)没有观察到Si-D-Si三中心键；(3)在光致电子自旋共振中确实存在29Si超精细结构，g=2.004和g=2.01.它的分裂宽度接近于悬挂键中心(g=2.005).讨论了这些结果，重点讨论了结构随机性、网络连接性和化学键的性质。
Metastability and reversibility of a variety of photo-induced phenomena in amorphous semiconductors have been widely researched. In the introductory part of this talk, these metastable effects are briefly reviewed from a phenomenological point of view. The main part is focused on photo-induced ESR centers with g-values equal to 2.005, 2.004 and 2.01 in undoped hydrogenated- and deuterated-amorphous silicons. It has been shown from electron-spin-echo-modulation experiments using pulsed ESR techniques that (1) deuterium (or hydrogen) is separated from a photo-created dangling bond defect (as well as a native one) by at least 5 Å, (2) Si-D-Si three-center bonds were not observed in the vicinity of a dangling bond defect, and (3)29Si hyperfine structure does exist in the light-induced ESR with g=2.004 and g=2.01 and its splitting width is close to that of dangling bond centers (g=2.005). These results are discussed with an emphasis towards the structural randomness, network connectivity, and the nature of chemical bonds.