A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier
A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier
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2GHz 三级 AlInAs-GaInAs-InP HEMT MMIC 低噪声放大器
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
A. Brown
中科院分区：
文献类型：
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作者：
S. Rosenbaum;L. Jelloian;L. Larson;U. Mishra;D. Pierson;M. Thompson;T. Liu;A. Brown
采用0.15 μ m栅长InP基（AlInAs-GaInAs）高电子迁移率晶体管（HEMT）工艺，研制了一种三级单片微波集成电路（MMIC）低噪声放大器（LNA）。LNA在2.25 ~ 2.5 GHz范围内噪声系数小于0.5 dB，增益大于35 dB。整个频带的输入和输出回波损耗超过15 dB。结果被认为是最好的MMIC放大器在这个频率范围内的日期报告。<<ETX>>
A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15- mu m-gate-length, InP-based (AlInAs-GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise figure and greater than 35-dB gain from 2.25 to 2.5 GHz. The input and output return loss exceeded 15 dB across the band. The results are believed to be the best reported to date for a MMIC amplifier in this frequency range.<<ETX>>