Surface modification of silicon with single ion irradiation
Surface modification of silicon with single ion irradiation
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DOI：
10.1016/j.apsusc.2007.07.034
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发表时间：
2007-10
影响因子：
6.7
通讯作者：
I. Ohdomari;T. Kamioka
中科院分区：
文献类型：
--
作者：
I. Ohdomari;T. Kamioka
为了解决硅纳米电子学中由于纳米尺寸结构中质量输运的相对增加而导致的器件功能波动和器件可靠性差等问题，并利用纳米尺寸产生新的功能，我们需要了解纳米尺寸结构特有的现象。基于在吞吐量、工艺时间和成本方面制造纳米结构的一种实用方法是将高能粒子（特别是单离子）对固体表面的修饰与随后的溶液化学处理相结合，我们描述了单离子辐照效应作为纳米尺度上修饰固体表面的工具，纳米尺度上固体表面的原位观察方法，以及所获得知识的一些例子。
In order to solve the issues in Si nanoelectronics such as fluctuation in the device functions and poor reliability of devices due to relative increase in mass transport in nm size structures and to yield novel functions by rather taking advantage of the nm size, we need to understand the phenomena peculiar to nm size structures. Based on the fact that a practical method to fabricate nm structures in terms of throughput, process time, and cost is to combine modification of solid surfaces with energetic particles (especially with single ions) and subsequent chemical processing in solutions, we describe single ion irradiation effects as a tool to modify solid surfaces in nm scale, a method for nm scale in-situ observation of solid surfaces, and some examples of the acquired knowledge.