Effects of arsenic in gas-source molecular beam epitaxy

Effects of arsenic in gas-source molecular beam epitaxy
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砷对气源分子束外延的影响

DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
C. Tu
C. Tu
中科院分区：
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文献类型：
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作者：
Y. Zhao;F. Deng;S. Lau;C. Tu

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研究了砷在GaN（As）气体源分子束外延中的作用。我们发现砷主要作为表面活性剂，当生长温度超过700 °C时，它显著改善GaN的表面形貌，而在较低的生长温度下，它被掺入GaN中高达1%。样品GaN0.99As0.01的光吸收显示出直接带隙的光吸收边，但与GaN相比带隙更小。
The role of arsenic in gas-source molecular beam epitaxy of GaN(As) was investigated. We found that arsenic mainly acts as a surfactant which dramatically improves the surface morphology of GaN when the growth temperature is over 700 °C, while it is incorporated into GaN as high as 1% at lower growth temperature. The optical absorption of the sample GaN0.99As0.01 shows a direct-band gap optical absorption edge, but smaller band gap compared to that of GaN.