Ripplon-limited mobility of surface electrons on thick films of He 3 over He 4
Ripplon-limited mobility of surface electrons on thick films of He 3 over He 4
复制标题
He 3 比 He 4 厚膜表面电子的瑞普隆极限迁移率
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
N. Studart
中科院分区：
文献类型：
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作者：
S. Sokolov;J. Rino;N. Studart
由于波纹散射而产生的电子迁移率是针对位于 $^{3}mathrm{He}$ 位于 $^{3}mathrm{ensuremath{-}}^{4}$He 混合物上方的厚层上的表面电子计算的。迁移率的温度依赖性是针对多个层厚度和垂直于液氦表面的小保持电场来确定的。还考虑了块体纯$^{3}mathrm{He}$上的表面电子迁移率，尽管$^{3}mathrm{He}$中存在强波纹阻尼的估计，但结果与现有实验数据非常一致。
The electron mobility due to the scattering by ripplons is calculated for surface electrons localized over a thick layer enriched with $^{3}mathrm{He}$ above the $^{3}mathrm{ensuremath{-}}^{4}$He mixture. The temperature dependence of the mobility is determined for several thicknesses of the layer and small holding electric fields normal to the liquid helium surface. The mobility of surface electrons over bulk pure $^{3}mathrm{He}$ is also considered, and the results are in excellent agreement with the available experimental data, in spite of the estimates of strong ripplon damping in $^{3}mathrm{He}$.