Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
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2.3–2.6 μm InGaAsSb/AlGaAsSb 量子阱激光器阈值电流的温度依赖性分析
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
D. Donetsky
中科院分区：
文献类型：
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作者：
A. Andreev;D. Donetsky
本文对InGaAsSb/AlGaAsSb量子阱激光器在2.3-2.6 μm波长范围内的俄歇复合和带间吸收进行了微观计算。计算表明，在这些激光结构中，主要的俄歇过程是空穴激发从量子阱的量子化能级到连续谱的过程。总俄歇系数表现出弱的温度依赖性。根据2.3 μ mInGaAsSb量子阱激光器异质结势垒空穴漏电流和模式增益的计算结果和最近的测量结果，计算了阈值电流的温度依赖性。结果表明，俄歇系数的显著值和激光增益的温度依赖性是决定2.3-2.6 μ mInGaAsSb/AlGaAsSb量子阱激光器阈值电流温度依赖性的主要因素。
We have carried out the microscopic calculations of Auger recombination and interband absorption in InGaAsSb/AlGaAsSb quantum-well (QW) lasers operating within wavelength range 2.3–2.6 μm. The calculations show that the dominant Auger process in these laser structures is the process with hole excitation from the quantized level in QW to the continuous spectrum. The total Auger coefficient shows a weak temperature dependence. Based on the results of calculations and recent measurements of the heterobarrier hole leakage current and modal gain in 2.3 μm InGaAsSb QW lasers, we have calculated the temperature dependence of the threshold current. It was shown that a significant value of the Auger coefficient and the temperature dependence of laser gain are the major factors determining the temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb QW lasers.