Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene
Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene
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DOI：
10.1063/1.4891558
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发表时间：
2014-07
影响因子：
4
通讯作者：
Xi Zhang;Chao Wang;Chang Q. Sun;Dong-feng Diao
中科院分区：
文献类型：
--
作者：
Xi Zhang;Chao Wang;Chang Q. Sun;Dong-feng Diao
本文阐明了反磁扶手椅边缘量子阱捕获的多余电子产生磁性的鲁棒机制。密度泛函理论计算结果与电子回旋共振实验结果的一致性验证了：(1)多层扶手椅纳米带稳定，有适量的多余电子可以提供净自旋；(2)由于欠配位导致晶格松弛和势阱调制，电子倾向于被困在边缘；(3)大量的多余电子和正电荷都不能产生磁性。这项工作揭示了石墨烯器件在其磁性应用中的发展。
In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications.