Atomic force microscopy lithography as a nanodevice development technique
Atomic force microscopy lithography as a nanodevice development technique
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DOI：
10.1088/0957-4484/10/4/317
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发表时间：
1999-12-01
期刊：
影响因子：
3.5
通讯作者：
Nicolini, C
中科院分区：
文献类型：
--
作者：
Notargiacomo, A;Foglietti, V;Nicolini, C
当今的纳米科学技术主要集中在纳米器件的制造上。我们的方法利用光刻工艺直接构建所需的纳米结构。制造过程涉及电子束光刻技术来定义金属微结构，使用原子力显微镜（AFM）作为机械修改工具在其上进行纳米级图案化。应用直接材料去除和 AFM 辅助掩模图案化，以实现电极对之间尽可能最小的间距。样品制备涉及聚合物沉积过程，该过程导致保形生长和与基材相当的表面粗糙度。该技术的应用结果表明，该过程具有可重复性，并且在光刻步骤中表现出良好的操作控制，这两者都由 AFM 的成像设施保证。纳米光刻技术已用于制造用于分子器件的纳米间隙电极。这里报告的研究可以被认为是开发更复杂的纳米器件（例如单电子晶体管）的可靠起点。
Nanoscale science and technology is today mainly focused on the fabrication of nanodevices. Our approach makes use of lithography processes to build the desired nanostructures directly. The fabrication process involves an electron-beam lithography technique to define metallic microstructures onto which nanometre scale patterning is performed using an atomic force microscope (AFM) as a mechanical modification tool. Both direct material removal and AFM-assisted mask patterning are applied in order to achieve the smallest possible separation between electrode pairs. The sample preparation involves a polymer deposition process that results in conformal growth and in surface roughness comparable to that of the substrate. The results of the application of this technique show that the process is reproducible and exhibits a good operation control during the lithographic steps, both ensured by the imaging facilities of the AFM. The nanolithography technique has been used to fabricate nanogap electrodes to be used for molecular devices. The study reported here can be considered as a reliable starting point for the development of more complex nanodevices, such as single-electron transistors.