Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si
Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si
复制标题
多晶硅中位错和氧沉淀物引起的深能级光致发光
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
T. Sekiguchi
中科院分区：
文献类型：
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作者：
M. Tajima;Y. Iwata;Futoshi Okayama;H. Toyota;H. Onodera;T. Sekiguchi
我们已经证明了位错相关的组件和组件的存在下，由于氧沉淀在一个广泛的深能级光致发光（PL）带在室温下在多晶硅。在PL强度映射中，在约0.79 eV处的深能级PL带的较低能量侧呈现为沿着沿着由两侧上的亮带包围的小角度晶界（SA-GB）的暗线，而在约0.87 eV处的较高能量侧呈现为沿着SA-GB的沿着亮线。这些强度的变化同意低温PL强度图案为良好建立的位错相关的线D1/D2和氧沉淀物，分别。这些图案在具有1-2°取向差角的SA-GB周围观察到，并且被认为是由于被形成SA-GB的位错团周围的应变场捕获的二次缺陷或杂质的分布以及位错上的优先氧沉淀。与D3/D4 I相关联的频谱分量。
We have demonstrated the presence of a dislocation-related component and a component due to oxygen precipitates in a broad deep-level photoluminescence (PL) band in multicrystalline Si at room temperature. In PL intensity mapping, the lower-energy side of the deep-level PL band at about 0.79 eV appeared as a dark line along a small-angle grain boundary (SA-GB) surrounded by a bright band on either side, while the higher-energy side at about 0.87 eV as a bright line along the SA-GB. These intensity variations agree with the low-temperature PL intensity patterns for well-established dislocation-related lines of D1/D2 and those for oxygen precipitates, respectively. These patterns were observed around SA-GBs with a misorientation angle of 1–2°, and were assumed to be due to the distribution of secondary defects or impurities trapped by the strain field around dislocation clusters forming SA-GBs and that of preferential oxygen precipitation on the dislocations. A spectral component associated with the D3/D4 l...