Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs
Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs
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纳米多孔 InP 蜂窝中移动电子的太赫兹光电导
DOI：
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发表时间：
2008
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影响因子：
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通讯作者：
M. Johnston
中科院分区：
文献类型：
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作者：
J. Lloyd‐Hughes;S. Merchant;L. Sirbu;I. Tiginyanu;M. Johnston
具有良好光电性能的纳米结构半导体可以通过电化学蚀刻来制造，这是一种可扩展用于大众市场应用的制造工艺。使用太赫兹光电导测量，我们表明，纳米多孔InP具有异常长的载流子复合寿命，超过100 ns，在低温和低载流子密度，和电子迁移率的一半，散装InP。建模证实，这些观察结果从带弯曲与空穴局限于表面和电子远离孔隙。
Nanostructured semiconductors with favorable optoelectronic properties can be created by electrochemical etching, a fabrication process that is scalable for mass market applications. Using terahertz photoconductivity measurements, we demonstrate that nanoporous InP has an unusually long carrier recombination lifetime that exceeds 100 ns at low temperatures and low carrier density, and an electron mobility half that of bulk InP. Modeling confirms that these observations result from band bending with holes confined to the surface and electrons away from the pores.