Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well
Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well
复制标题
DOI：
10.1063/1.1949722
复制
发表时间：
2005-06
影响因子：
4
通讯作者：
M. Hickey;C. Damsgaard;I. Farrer;S. Holmes;A. Husmann;J. Hansen;C. S. Jacobsen;D. Ritchie;R. F. Lee;G. Jones;M. Pepper
中科院分区：
文献类型：
--
作者：
M. Hickey;C. Damsgaard;I. Farrer;S. Holmes;A. Husmann;J. Hansen;C. S. Jacobsen;D. Ritchie;R. F. Lee;G. Jones;M. Pepper
报道了GaAs p-i-n光学器件中[100] In0.2Ga0.8As窄量子阱中的电自旋注入。量子阱位于距离AlGaAs肖特基势垒300 nm处，该系统用于比较Fe和Heusler合金Co2.4Mn1.6Ga分子束外延生长的自旋注入的效率和温度依赖性。在5 K时，Fe和Co_（2.4）Mn_（1.6）Ga注入器的注入电子自旋极化率分别为31%和13%。光学检测在倾斜的Hanle几何中进行。低于10 K的动态核极化效应增强了两种设备中注入自旋所看到的磁场。通过点接触Andreev反射电导测量发现Co2.4Mn1.6Ga薄膜的输运自旋极化率约为50%。
Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p‐i‐n optical device is reported. The quantum well is located 300nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the Heusler alloy Co2.4Mn1.6Ga grown by molecular-beam epitaxy. At 5K, the injected electron spin polarizations for Fe and Co2.4Mn1.6Ga injectors are 31% and 13%, respectively. Optical detection is carried out in the oblique Hanle geometry. A dynamic nuclear polarization effect below 10K enhances the magnetic field seen by the injected spins in both devices. The Co2.4Mn1.6Ga thin films are found to have a transport spin polarization of ∼50% by point contact Andreev reflection conductivity measurements.