Photovoltaic p-i-n Structure of Sb2S3 and CuSbS2 Absorber Films Obtained via Chemical Bath Deposition
Photovoltaic p-i-n Structure of Sb2S3 and CuSbS2 Absorber Films Obtained via Chemical Bath Deposition
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DOI：
10.1149/1.1945387
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发表时间：
2005-08
影响因子：
3.9
通讯作者：
Y. Rodríguez-Lazcano;M. Nair;P. K. Nair
中科院分区：
文献类型：
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作者：
Y. Rodríguez-Lazcano;M. Nair;P. K. Nair
化学沉积的近本态Sb2S3薄膜和通过加热Sb2S3- cu薄膜得到的p- cusbs2薄膜被整合成p-i-n结构：sno2:F-(n)CdS:In-(i)Sb2S3-(p)CuSbS2-Ag。在照度为1 kW m - 2的钨卤灯下，观察到开路电压为345 mV。短路电流为0.2 mA/ cm2。介绍了sb2s3和cusbs2的结构、光学和电学性质。cusbs2薄膜的x射线光电子能谱深度分布表明，Cu、Sb和S原子的组成在薄膜厚度上是均匀的。采用标准模式和固定角度掠入射的x射线衍射研究显示了光伏p-i-n器件的层状结构。
Chemically deposited, near-intrinsic Sb 2 S 3 thin films and p-CuSbS 2 thin films obtained through heating Sb 2 S 3 -CuS thin films have been integrated into a p-i-n structure: SnO 2 :F-(n)CdS:In-(i)Sb2S3-(p)CuSbS2-Ag. An open-circuit voltage of 345 mV has been observed under an intensity of illumination of 1 kW m - 2 using a tungsten-halogen lamp. The short-circuit current was 0.2 mA/cm 2 . Structural, optical, and electrical properties of Sb 2 S 3 and CuSbS 2 are presented. X-ray photoelectron spectroscopy depth profile on the CuSbS 2 film indicated uniformity in composition with respect to Cu, Sb, and S atoms through the film thickness. X-ray diffraction studies using standard mode and grazing incidence at fixed angles showed the layer structure of the photovoltaic p-i-n device.