Organic Solar Cells Using Transparent SnO2–F Anodes
Organic Solar Cells Using Transparent SnO2–F Anodes
复制标题
DOI:
10.1002/adma.200600797
复制
发表时间:
2006-08
影响因子:
29.4
通讯作者:
Fan Yang;Stephen R. Forrest
中科院分区:
文献类型:
--
作者:
Fan Yang;Stephen R. Forrest
Organic solar cells have attracted attention as a means to achieve low-cost solar-energy conversion owing to their ease of manufacture and compatibility with flexible substrates. Conventional organic molecular photovoltaic (PV) devices and light-emitting diodes (OLEDs) are typically grown on transparent indium tin oxide (ITO) anodes that are also widely used for flat-panel displays (FPDs). The scarcity of In, along with the rapid expansion of FPD production, has resulted in a soaring price of ITO-coated glass substrates, with the current price up to ten times greater than in 2003. Alternative transparent conducting oxides such as doped SnO2 or ZnO have been used as electrodes in dye-sensitized, CdTe, microcrystalline Si, and amorphous Si PV devices. Organic small-molecule or polymeric devices, with active layers typically < 1000 A thick, can readily be shorted owing to the pronounced surface-roughness characteristic of these oxide variants. Nevertheless, the cost of F-doped SnO2 (SnO2–F)coated glass is less than one third that of ITO-coated glass. While there have been reports of using SnO2–F as the transparent anode for polymeric OLEDs and solar cells, to our knowledge there has yet to be a demonstration of an organic heterojunction (HJ) PV cell based on SnO2–F anodes with an efficiency greater than 0.1 %. Here, we report on copper phthalocyanine (CuPc)/C60 HJ PV cells on SnO2–F anodes [8] with a power conversion efficiency of 2.5 % at 1 sun simulated AM 1.5 G (AM: air mass; G: Global) illumination. The organic layers were grown by organic vapor-phase deposition (OVPD) that enabled complete coverage of the rough oxide surface, effectively preventing shorts between opposing cathode and anode contacts. In addition, we show that by controlling the organic-film morphology, we can grow the donor–acceptor (D–A) interface into a three-dimensional interdigitated bulk HJ (BHJ) structure, resulting in power-conversion efficiencies nearly twice those of analogous devices with a planar heterointerface. As shown in Figure 1a, the 750 nm thick SnO2–F-coated glass substrates have 70–80 % transmittance in the visible range, or approximately 10 % less than that for glass with 150 nm thick ITO coatings. The absorption of both substrates has a high-energy cutoff at wavelengths less than 350 nm, implying a match of the transparency window to that of the solar radiation spectrum. The sheet resistance of SnO2–F-coated glass is less than 12 X/sq., lower than that of ITO-coated glass (15 X/sq.) The high transparency and small resistance C O M M U N IC A TI O N S