Investigation of V-shaped extended defects in a 4H-SiC epitaxial film
Investigation of V-shaped extended defects in a 4H-SiC epitaxial film
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4H-SiC 外延膜中 V 形扩展缺陷的研究
DOI：
10.1080/14786435.2016.1275869
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发表时间：
2017
影响因子：
1.6
通讯作者：
Yuichi Ikuhara
中科院分区：
文献类型：
--
作者：
Eita Tochigi;Hirofumi Matsuhata;Hirotaka Yamaguchi;Takashi Sekiguchi;Hajime Okumura;Yuichi Ikuhara
利用同步辐射X射线形貌术、光致发光成像/光谱和透射电子显微镜（TEM）研究了外延4 H-SiC中基面上两种类型的V形扩展缺陷。一种是（2，5）层错（Zhdanov记法），由两个伯格斯矢量为b ± 1/4[0 0 0 1]的部分位错所包围，另一种是（2，3，3，5）层错，由b = ±1/4[0 0 0 1]的部分位错所包围。与（2，3，3，5）断层相关的部分位错的核心有一个面外分量（弗兰克分量）和三个面内分量（肖克莱分量）;三个肖克莱分量被完全抵消。通过光致发光光谱和第一性原理计算进一步研究了（2，5）和（2，3，3，5）层错的电子结构。这表明，（2，5）和（2，3，3，5）堆垛层错都有一个带间状态在一个类似的能级，虽然它们的结构不同。
We investigated two types of V-shaped extended defects on the basal plane in epitaxial 4H-SiC by synchrotron X-ray topography, photoluminescence imaging/spectroscopy and transmission electron microscopy (TEM). One is the (2, 5) stacking fault (in Zhdanov notation) bounded by two partial dislocations with the Burgers vectorb± 1/4[0 0 0 1]; the other is the (2, 3, 3, 5) stacking fault bounded by partial dislocations withb= ±1/4[0 0 0 1]. The core of the partial dislocations associated with the (2, 3, 3, 5) fault has an out-of-plane component (Frank component) and three in-plane components (Shockley components); the three Shockley components are cancelled out in total. The electronic structures of the (2, 5) and (2, 3, 3, 5) stacking faults were further examined by photoluminescence spectroscopy and first-principles calculations. It is suggested that the (2, 5) and (2, 3, 3, 5) stacking faults both have an interband state at a similar energy level, although they differ structurally.