Large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
Large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures
复制标题
DOI：
10.1063/5.0073976
复制
发表时间：
2018-06
影响因子：
15
通讯作者：
Yang Lv;J. Kally;Tao Liu;P. Quarterman;T. Pillsbury;B. Kirby;A. Grutter;P. Sahu;J. Borchers;Mingzhong Wu;N. Samarth;Jianping Wang
中科院分区：
文献类型：
--
作者：
Yang Lv;J. Kally;Tao Liu;P. Quarterman;T. Pillsbury;B. Kirby;A. Grutter;P. Sahu;J. Borchers;Mingzhong Wu;N. Samarth;Jianping Wang
由于其独特的对称性，单向自旋Hall和Rashba-Edelstein磁电阻（USRMR）具有很大的基础和实际意义，特别是在阅读磁化状态的上下文中的两端自旋轨道转矩开关存储器和逻辑器件。最近的研究表明，拓扑绝缘体可以提高USRMR幅度。然而，拓扑绝缘体器件配置研究到目前为止，在这方面，即铁磁金属/拓扑绝缘体双层和磁性掺杂的拓扑绝缘体，遭受电流分流的金属层和低居里温度，分别。在这里，我们报告大USRMR在一个新的材料类别-磁性绝缘体/拓扑绝缘体双层异质结构。这样的结构表现出USRMR是大约一个数量级大于迄今为止在全金属Ta/Co双层中报道的最高值。我们还演示了电流诱导的磁化切换辅助的奥斯特场，和电读出的USRMR，作为一个原型存储器设备。
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metallic layer and low Curie temperature, respectively. Here, we report large USRMR in a new material category - magnetic insulator/topological insulator bi-layered heterostructures. Such structures exhibit USRMR that is about an order of magnitude larger than the highest values reported so far in all-metal Ta/Co bilayers. We also demonstrate current-induced magnetization switching aided by an Oersted field, and electrical read out by the USRMR, as a prototype memory device.