Conductance quantization in a Ag filament-based polymer resistive memory
Conductance quantization in a Ag filament-based polymer resistive memory
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基于银丝的聚合物电阻存储器中的电导量化
DOI：
10.1088/0957-4484/24/33/335201
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发表时间：
2013-08-23
期刊：
影响因子：
3.5
通讯作者：
Pan, Feng
中科院分区：
文献类型：
--
作者：
Gao, Shuang;Zeng, Fei;Pan, Feng
系统地研究了Ag/聚（3-己基噻吩）：[6，6]-苯基-C_（61）-丁酸甲酯/铟锡氧化物三明治结构的电阻开关和电导量子化。所观察到的双极开关行为可以归因于形成和溶解的Ag丝在正，负电压扫描，分别。更重要的是，可以通过减慢电压扫描速度以及通过脉冲测量来实现单原子点接触的整数倍和半整数倍的电导量化。前者可能反映了所形成的具有不同原子点接触的Ag细丝，而后者可能源于Ag细丝与有机存储介质提供的元素氢之间的相互作用。在适当的电流顺应性下，成功地实现了具有所需量化电导值的低阻态，从而显示出高密度存储器应用的潜力。此外，100个连续的开关周期与密集分布的每个电阻状态的电阻值和外推保持性能超过十年也被证明。
Resistive switching and conductance quantization are systematically studied in a Ag/poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester/indium-tin oxide sandwich structure. The observed bipolar switching behavior can be attributed to the formation and dissolution of Ag filaments during positive and negative voltage sweeps, respectively. More importantly, conductance quantization with both integer and half integer multiples of single atomic point contact can be realized by slowing down the voltage sweep speed as well as by pulse measurement. The former may reflect the formed Ag filaments with different atomic point contacts, while the latter probably originates from the interaction between the Ag filaments and the elemental hydrogen provided by the organic storage medium. With appropriate current compliances, low resistance states with desired quantized conductance values are successfully achieved, thus showing the potential for ultrahigh density memory applications. Besides, 100 successive switching cycles with densely distributed resistance values of each resistance state and extrapolated retention properties over ten years are also demonstrated.