Reversible plasma switching in epitaxial BiFeO3 thin films
Reversible plasma switching in epitaxial BiFeO3 thin films
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DOI：
10.1063/1.3431585
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发表时间：
2010-05
影响因子：
4
通讯作者：
Yunseok Kim;I. Vrejoiu;D. Hesse;M. Alexe
中科院分区：
文献类型：
--
作者：
Yunseok Kim;I. Vrejoiu;D. Hesse;M. Alexe
利用压电响应力显微镜直接观察和分析了外延多铁性BiFeO 3薄膜中的可逆等离子体开关。分别采用氧等离子体和随后的真空热退火处理可以可逆地切换极化。等离子体切换时的畴壁速度估计约为10−8 m/s，比正常的电切换慢得多，但可以稳定地切换平方厘米尺度的大面积。结果表明，氧等离子体处理可以实现可逆的等离子体开关，它可以是一个有用的工具，无电极控制大面积的铁电开关。
Reversible plasma switching in epitaxial multiferroic BiFeO3 thin films was directly observed and analyzed using piezoresponse force microscopy. The polarization could be reversibly switched using oxygen plasma and a subsequent thermal annealing treatment in vacuum, respectively. The domain wall velocity during plasma switching, estimated to about 10−8 m/s, is much slower compared to the normal electrical switching, however a large area of square centimeter scale could be stably switched. The results demonstrate that reversible plasma switching can be achieved by oxygen plasma treatment and it can be a useful tool for an electrode-less control of ferroelectric switching on large area.