Tunnel diode oscillator application to high sensitivity de Haas–van Alphen and superconducting critical field studies of anisotropic organic conductors
Tunnel diode oscillator application to high sensitivity de Haas–van Alphen and superconducting critical field studies of anisotropic organic conductors
复制标题
隧道二极管振荡器在高灵敏度 de Haas-van Alphen 中的应用以及各向异性有机导体的超导临界场研究
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
M. Tokumoto
中科院分区：
文献类型：
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作者：
G. Athas;J. Brooks;S. Klepper;S. Uji;M. Tokumoto
我们首次应用隧道二极管电路来研究小单晶有机导体中的de Haas-van Alphen效应和超导临界场值。感兴趣的材料属于电荷转移盐（BEDT-TTF）2X家族，其中X是许多阴离子结构之一。将小的（≤1 mm 3）取向单晶样品放置在振荡器的LC储能电路的电感线圈内，并在低温和高磁场下进行测量。我们观察到一个显着的改善，比以前的磁性方法的确定两个de Haas-val Alphen信号和关键领域的研究。该方法适用于需要此类信息的非常小的样品。
We report the first application of a tunnel diode circuit to investigate the de Haas–van Alphen effect and superconducting critical field values in small single crystal organic conductors. The materials of interest are in the family of charge transfer salts (BEDT‐TTF)2X, where X is one of a number of anion structures. Small (≤1 mm3) oriented single crystal samples were placed inside the inductance coil of the LC tank circuit of the oscillator, and measurements were carried out at low temperatures and in high magnetic fields. We observe a marked improvement over previous magnetic methods for the determination of both de Haas–val Alphen signals and for critical field studies. The method is applicable where such information is required for very small samples.