Dynamical x‐ray rocking curve simulations of nonuniform InGaAs and InGaAsP using Abeles’ matrix method
Dynamical x‐ray rocking curve simulations of nonuniform InGaAs and InGaAsP using Abeles’ matrix method
复制标题
使用阿贝尔斯矩阵法模拟非均匀 InGaAs 和 InGaAsP 的动态 X 射线摇摆曲线
DOI:
10.1063/1.337311
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发表时间:
1986
影响因子:
3.2
通讯作者:
D. Berreman
中科院分区:
文献类型:
--
作者:
A. Macrander;E. Minami;D. Berreman
Computer simulations of the intrinsic (400) reflecting power of In1−xGaxAs layers having graded compositions are presented. We find that multiple x‐ray peaks can result from a linearly graded region which implies that an interpretation which ascribes individual peaks to sublayers having a constant lattice parameter may not always be correct. We find that, in general, the simulations are asymmetric and that they have a full width at half maximum less than ∼100 arcsec. We have simulated an actual rocking curve of a single In1−xGaxAs1−yPy layer grown on a (100) InP substrate by vapor‐phase epitaxy which exhibited multiple peaks, and we find that a good fit is possible if the layer had a graded lattice parameter. Comparing dynamical to kinematical simulations for a 3‐μm‐thick linearly graded layer, we find that most of the features resulting from the grading can be explained using kinematical theory. However, only the dynamical simulations can properly account for the reflecting power in the vicinity of the s...