Production and Control of Low-Pressure Ar and CF4 Plasmas Using Surface Waves
Production and Control of Low-Pressure Ar and CF4 Plasmas Using Surface Waves
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DOI：
10.1143/jjap.37.2406
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发表时间：
1998-04
影响因子：
1.5
通讯作者：
M. Nagatsu;I. Ghanashev;S. Morita;H. Sugai
中科院分区：
文献类型：
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作者：
M. Nagatsu;I. Ghanashev;S. Morita;H. Sugai
利用缝隙天线激发的方法研究了低压（~ 10 mTorr）表面波等离子体的产生和控制。采用缝隙天线激发技术在Ar或CF 4气体中产生了高密度（>1011 cm-3）平面等离子体（直径为22 cm）。在增加微波功率或调节调谐器时，我们观察到从低密度到过密度（ωpe>ω）SW等离子体模式的模式跳跃。所观察到的模式跳跃是一致的简化的理论本征模分析的结果下，在等离子体中的均匀密度分布的假设（双界面模型）。
Production and control of surface wave (SW) plasma at low pressures (∼10 mTorr) were studied using slot antenna excitation. High-density (>1011 cm-3) planar plasmas (with a diameter of 22 cm) were produced in Ar or CF4 gases using slot antenna excitation techniques. On increasing the microwave power or adjusting the tuner, we observed a mode jump from a low-density to an overdense (ωpe>ω) SW plasma mode. The observed mode jump is consistent with the results of a simplified theoretical eigenmode analysis under the assumption of uniform density distribution in the plasma (the two-interface model).