Minute Tunnel Structure Formation with Permanent Film Photoresist
Minute Tunnel Structure Formation with Permanent Film Photoresist
复制标题
使用永久膜光刻胶形成微小隧道结构
DOI：
10.2494/photopolymer.19.57
复制
发表时间：
2006
影响因子：
0.8
通讯作者：
H. Honma
中科院分区：
文献类型：
--
作者：
K. Misumi;Koji Saito;Atsushi Yamanouchi;Takahiro Senzaki;H. Honma
永久薄膜光刻胶是MEMS领域的一种多用途材料。研究了用永久光刻胶制备微型隧道结构的工艺。将半导体器件封装成微小的隧道结构，用作SAW（表面声波）和BAW（体声波）滤波器，用作喷墨头喷嘴或半导体微通道作为散热器是它的一些潜在应用。我们采用液体抗蚀剂和干膜抗蚀剂，建立了一种名为tent的独特技术。本文将详细介绍帐篷法。
The permanent film photoresist is a versatile material in the MEMS field. The formation technology of the minute tunnel structure with the permanent photoresist is watched with keen interest. The encasing of the semiconductor device with the minute tunnel structure to be used as a SAW (Surface Acoustic Wave) and BAW (Bulk Acoustic Wave) Filter, application as a ink jet head nozzle or micro channel for the semiconductor as a radiator are some of it potential applications.We have established a unique technology named Tenting by using a liquid resist and a dry film resist. This paper will present the Tenting method in detail.