Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
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高掺杂硅通道中的室温电子自旋输运
DOI：
10.1143/apex.4.023003
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发表时间：
2011
影响因子：
2.3
通讯作者：
K. Noguchi
中科院分区：
文献类型：
--
作者：
Toshio Suzuki;T. Sasaki;T. Oikawa;M. Shiraishi;Yoshishige Suzuki;K. Noguchi
我们报道了在室温(RT)下，利用带有自旋注入器和由Fe/MgO隧道势垒组成的探测器的四端横向器件，在高掺杂硅沟道中产生自旋电流和自旋输运的首次演示。利用非局域技术产生了自旋电流，并在300K下成功探测到自旋注入信号和Hanle自旋进动，从而证明了自旋注入消除了杂散信号。用Hanle型自旋进动估算的自旋扩散长度和RT寿命分别为0.6微米和1.3 ns。
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier. Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 µm and 1.3 ns by the Hanle-type spin precession, respectively.