Temperature effect on the substrate selectivity of carbon nanotube growth in floating chemical vapor deposition
Temperature effect on the substrate selectivity of carbon nanotube growth in floating chemical vapor deposition
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DOI：
10.1088/0957-4484/18/41/415703
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发表时间：
2007-10
期刊：
影响因子：
3.5
通讯作者：
R. Xiang;Guohua Luo;Zhoufei Yang;Qiang Zhang;W. Qian;F. Wei
中科院分区：
文献类型：
--
作者：
R. Xiang;Guohua Luo;Zhoufei Yang;Qiang Zhang;W. Qian;F. Wei
An easy approach to control the carbon nanotube (CNT) array selectivity on Si/SiO2 in the floating chemical vapor deposition (CVD) method by adjusting the operation temperature is demonstrated. Aligned CNTs can be obtained directly on Si using a standard procedure at a relatively low temperature. After analyzing the temperature influence on different substrates, an attempt to grow an ultra-long CNT forest at the optimized temperature and without any feedstock diffusion limitation is discussed.
