Electronic structure of In2O3 from resonant x-ray emission spectroscopy
Electronic structure of In2O3 from resonant x-ray emission spectroscopy
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DOI：
10.1063/1.3070524
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发表时间：
2009-01
影响因子：
4
通讯作者：
L. Piper;A. Demasi;S. Cho;Kevin E Smith;F. Fuchs;F. Bechstedt;C. Körber;A. Klein;D. Payne;R. Egdell
中科院分区：
文献类型：
--
作者：
L. Piper;A. Demasi;S. Cho;Kevin E Smith;F. Fuchs;F. Bechstedt;C. Körber;A. Klein;D. Payne;R. Egdell
The valence and conduction band structures of In2O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2O3.
