Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods
Statistical analysis of current–voltage characteristics in Au/Ta2O5/n-GaN Schottky barrier heterojunction using different methods
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不同方法对Au/Ta2O5/n-GaN肖特基势垒异质结电流电压特性的统计分析
DOI：
10.1007/s00339-020-04173-2
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
Vasudeva Reddy Minnam Reddy
中科院分区：
文献类型：
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作者：
V. Manjunath;Nanda Kumar Reddy Nallabala;C. Yuvaraj;Chandramohan Kukkambakam;Venkata Krishnaiah Kummara;Suresh Kumar;Shivani Sharma;M. Lakshmaiah;Vasudeva Reddy Minnam Reddy
利用电子束蒸发技术研究了ta2o5薄膜在Au/GaN界面的掺入对电化学性能的影响。利用i - V测量对制备的Au/Ta2O5/n-GaN MIS结进行了分析，并将其扩展到±20 V的电压范围。肖特基二极管参数instanceΦbo， nandrs值在室温下使用i - v曲线进行评估。统计分布分析表明，“Φbo”均值为0.85 eV，偏差为0.00181 eV，与“n”的均值为1.36，正态偏差为0.00562。两个重要的电气参数，如rsandrshvalue也从i - v特性中提取。此外，利用张、Norde、改进的Norde、Hernandez和Chattopadhyay方法从i - v数据中计算Schottky势垒参数。将提取的Au/Ta2O5/n-GaN MIS结的asn、ΦboandRSfromI-Vcharacteristics等电参数进行了比较，结果吻合较好。在正向偏压下，制备的Au/Ta2O5/n-GaN MIS结的传导机制如欧姆和SCL分别在低电压和高电压下占主导地位。通过拟合i - v曲线的逆偏置区，发现在Au/Ta2O5/n-GaN界面上，PF传导机制占主导地位。综上所述，在外延GaN和蓝宝石衬底之间有针对性地沉积了未掺杂的GaN缓冲层，从而获得了6.06 × 104的优异整流比和0.87 eV的高SBH。
We report on the influence of incorporation of Ta2O5thin film at the interface of Au/GaN by means of e-beam evaporation technique. The fabricated Au/Ta2O5/n-GaN MIS junctions have been analysed usingI–Vmeasurements and were extended to a voltage range of ± 20 V. The Schottky diode parameters for instanceΦbo,nandRSvalues are evaluated usingI–Vcurves at room temperature. The statistical distribution analysis provides the mean ‘Φbo’ value of 0.85 eV with deviation of 0.00181 eV and mean value from ‘n’ is 1.36 with a normal deviation of 0.00562. Two important electrical parameters such asRSandRshvalues are also extracted fromI–Vcharacteristics. Furthermore, Cheung, Norde, modified Norde, Hernandez and Chattopadhyay methods are used to evaluate the Schottky barrier parameters fromI–Vdata. The comparison is made between the extracted electrical parameters such asn,ΦboandRSfromI–Vcharacteristics of Au/Ta2O5/n-GaN MIS junctions and are in well agreement with each other. Under forward-bias, the fabricated Au/Ta2O5/n-GaN MIS junction conduction mechanisms such as ohmic and SCL were found to be dominant at lower and higher voltage regimes, respectively. By fitting reverse-bias region ofI–Vcurves, PF conduction mechanism was found to be dominant at the interfaces of Au/Ta2O5/n-GaN. In conclusion, the obtained superior rectification ratio of 6.06 × 104and higher SBH of 0.87 eV was ascribed to the purposefully deposited undoped GaN buffer layer between epitaxial GaN and sapphire substrate.