RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases
RF Sputter-Etching by Fluoro-Chloro-Hydrocarbon Gases
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氟氯烃气体射频溅射蚀刻
DOI：
10.7567/jjaps.2s1.435
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发表时间：
1974
影响因子：
1.5
通讯作者：
Tatsuo Asamaki
中科院分区：
文献类型：
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作者：
N. Hosokawa;R. Matsuzaki;Tatsuo Asamaki
为了提高使用常规rf溅射系统的蚀刻速率，研究了氟氯烃的溅射气体，其组成为CF 4、CCl 2F 2、CCl 3F、CHCl 2F、CHClF 2、（CCl 2F）2、CCl 2FCClF 2和（CBrF 2）2。蚀刻样品为Si、石英、玻璃、Al、Mo、不锈钢和光刻胶。当刻蚀台射频功率密度为1.3W/cm ~ 2时，刻蚀速率为1000 ~ 2000 μ m/min，比氩气刻蚀速率提高10 ~ 20倍。高蚀刻速率被认为是由于在试样表面上形成挥发性化合物。然而，蚀刻机理目前还没有详细阐明。还研究了氧对刻蚀速率的影响，发现氧含量为12.5%时，Si的刻蚀速率不降低。
In order to enhance an etching rate using a conventional rf sputtering system, sputtering gases of fluoro-chloro-hydro-carbon were examined, the compositions of which were CF4, CCl2F2, CCl3F, CHCl2F, CHClF2, (CCl2F)2, CCl2FCClF2, and (CBrF2)2. Etching specimens were Si, quartz, glass, Al, Mo, stainless steel and photo resist. With the rf power density of 1.3 W/cm2 at the etching table, the etching rate of Si was ranged from 1000 to 2000 Å/min, which were ten to twenty times higher than that by argon. High etching rate is considered to be due the formation of volatile compounds on the surface of specimens. However, etching mechanism is not clarified in detail now. The effect of oxygen on the etching rate was also investigated, and it was found that the etching rate of Si did not decrease up to 12.5% in content of oxygen.