Organic heterostructure device with nonvolatile memory behavior using electrically doped layers
Organic heterostructure device with nonvolatile memory behavior using electrically doped layers
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DOI：
10.1063/1.3046723
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发表时间：
2008-12
影响因子：
4
通讯作者：
F. Lindner;K. Walzer;K. Leo
中科院分区：
文献类型：
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作者：
F. Lindner;K. Walzer;K. Leo
最近，报道了几种基于有机半导体的存储器件。在大多数情况下，采用单一的有机层，开关机制没有完全理解。在这里，我们报告了一种新的器件结构的基础上，电掺杂的有机异质结构显示出高度稳定的记忆行为。有机层嵌入在底部氧化铟锡和顶部金属接触之间，并形成量子阱状结构。该器件在电流-电压特性和良好定义的开关行为表现出滞后。我们在这些有机多层异质结器件中实现了可再现的电开关和稳定的存储现象。这两种状态保持长达数天，其开/关比没有明显降低。此外，发现开/关电流的比率取决于写入电压，从而允许用作多态存储器。
Recently, several memory devices based on organic semiconductors were reported. In most cases, single organic layers were employed, and the switching mechanisms were not fully understood. Here, we report on a novel device structure based on electrically doped organic heterostructures showing highly stable memory behavior. The organic layers are embedded between a bottom indium tin oxide and a top metal contact and form a quantum well-like structure. The device shows a hysteresis in the current-voltage characteristics and well-defined switching behavior. We achieved reproducible bistable electrical switching and stable memory phenomena in these organic multilayer heterostructure devices. The two states were retained for up to several days without noticeable decrease of their on/off ratio. Further, it was found that the ratio of the on/off current depends on the writing voltage, allowing the use as multistate memory.