Effect of deposition temperature on the structural and electrical properties of spray deposited kesterite (Cu2ZnSnS4) films
Effect of deposition temperature on the structural and electrical properties of spray deposited kesterite (Cu2ZnSnS4) films
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DOI：
10.1016/j.solener.2015.09.027
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发表时间：
2015-12
期刊：
影响因子：
6.7
通讯作者：
Sanjay Kumar Swami;N. Chaturvedi;Anuj Kumar;V. Dutta
中科院分区：
文献类型：
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作者：
Sanjay Kumar Swami;N. Chaturvedi;Anuj Kumar;V. Dutta
采用喷雾技术沉积Cu 2 ZnSnS 4（CZTS）薄膜，以Cu（I）、Zn和Sn（II）的氯化物与硫脲沿着作为喷雾溶液的前体，基底温度在200 °C至450 °C之间变化。使用这些前体导致在200 °C开始形成CZTS相，并且仅在超过350 °C时形成次级相。在200 °C和250 °C下沉积的CZTS薄膜显示出分别为502.39 Ω-cm和51.84 Ω-cm的高电阻率，载流子浓度分别为2.85 × 1014 cm-3和5.55 × 1015 cm-3。在400 °C和450 °C下第二相的形成强烈影响膜的性质。在350 °C下沉积的CZTS薄膜显示出最佳的电阻率为0.19 Ω·cm。SEM分析显示在350 °C下沉积的膜的表面上的纳米薄片的生长，并且C-AFM揭示由于高的内部导电性，膜具有最高的电流范围，这可能是降低的膜电阻率和增强的光吸收的原因。CZTS膜在350 °C下具有从lnσ对1000/T的Arrhenius图计算的最低活化能。能量色散谱（EDS）分析表明，CZTS薄膜中各组分的原子百分比随温度变化而变化，从而影响带隙。在350 °C下沉积的膜接近化学计量，带隙为1.45 eV，使其最适合于太阳能电池制造。
Spray technique is used for the deposition of Cu2ZnSnS4(CZTS) films, taking the chlorides of Cu(I), Zn and Sn(II) along with thiourea as precursors for the spray solution, with the substrate temperature varying from 200 °C to 450 °C. Use of these precursors results in CZTS phase formation starting at 200 °C and only beyond 350 °C the secondary phases are formed. CZTS films deposited at 200 °C and 250 °C show high resistivity’s of 502.39 Ω-cm and 51.84 Ω-cm, respectively and carrier concentrations of 2.85 × 1014cm−3and 5.55 × 1015cm−3, respectively. The formation of secondary phases at 400 °C and 450 °C strongly affects the film properties. CZTS films deposited at 350 °C show the best resistivity of 0.19 Ω-cm. SEM analysis shows growth of nano-flakes on the surface of the film deposited at 350 °C, and C-AFM reveals that the film has the highest current range due to high internal conductivity which can be the cause of reduced film resistivity and enhanced optical absorption. CZTS film at 350 °C had the lowest activation energy calculated from the Arrhenius plot of lnσvs 1000/T. Energy dispersive spectroscopy (EDS) analysis shows that the atomic percentages of the constituents in the CZTS films change with the temperature and accordingly affect the band gap. The film deposited at 350 °C is nearly stoichiometric with the band gap of 1.45 eV making it best suited for solar cell fabrication.