Investigation of optical properties about Rubrene:MoO3 film

Investigation of optical properties about Rubrene:MoO3 film
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Rubrene:MoO3 薄膜光学性质的研究

DOI:
10.1016/j.ijleo.2019.163923
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发表时间:
2020
期刊:
影响因子:
3.1
通讯作者:
Wang Jiyou
Wang Jiyou
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Li Ruidong;Deng Jinxiang;Chen Liang;Zhang Hao;Xu Zhiyang;Sun Junjie;Zhang Xiaoxia;Zhang Jie;Wang Xiaolei;Wang Guisheng;Gao Hongli;Yang Qianqian;Duan Ping;Wang Jiyou

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采用热蒸发技术在石英衬底上制备了1:1wt比的Rubrene:MoO3混合薄膜,测量了混合薄膜的吸收光谱。结果表明,混合薄膜在近红外区(∼-930 nm)有较强的吸收,表明Rubrene与MoO3之间的相互作用是在Rubrene禁带内强烈诱导的中间态,形成了电荷转移络合物。此外,根据光学带隙的测量,跃迁类型为直接允许跃迁。为了进一步分析MoO_3对Rubrene的影响,还采用热蒸发技术制备了不同MoO_3含量的Rubrene:MoO_3薄膜。测量了混合薄膜的吸收光谱,结果表明,随着MoO_3浓度的增加,Rubrene与MoO_3的相互作用增强,电子跃迁所需的能量减小。研制了基于Rubrene:MoO_3薄膜的近红外光电探测器件。测量了器件的电流-电压(I-V)特性,结果表明,在5V偏压下,在940 nm光照、0.5W·cm∼2光强下,红外探测器的I-光/I暗比为−-8。
Rubrene: MoO 3 mixed films (in 1: 1 wt ratio) were deposited on quartz substrates using the thermal evaporation technique and the absorption spectrum of the mixed film was measured. The results demonstrate that the mixed film shows intensively absorption at the near-infrared region (∼ 930 nm) which indicates that the interaction between Rubrene and MoO 3 is intensively and induced intermediate level in the band gap of Rubrene and formed charge-transfer complex (CTC). Furthermore, the type of transition is direct allowed transition according to the measurement of optical band gap. To further analysis the affection of MoO 3 to Rubrene, the Rubrene: MoO 3 films with different proportion of MoO 3 were also prepared using the thermal evaporation technique. The absorption spectrum of the mixed films was measured and the results demonstrate that the interaction between Rubrene and MoO 3 is enhancing with the concentration of MoO 3 increasing and the energy needed by the transition of electrons is decreasing. The near-infrared photo-detection device based on Rubrene: MoO 3 film was fabricated. The current-voltage (I–V) characteristic of the device was measured and the results demonstrate that under 5 V bias, the infrared detector exhibits an I photo/I dark ratio of∼ 8 under a 940 nm light illumination with a light intensity of 0.5 W· c m− 2.